Title :
Fully balanced tunable GaAs MESFET transconductor-C
Author_Institution :
Mixed Silicon Structures, Roubaix, France
fDate :
2/13/1997 12:00:00 AM
Abstract :
A fully balanced tunable GaAs MESFET transconductor is described. The integrator features independent control of the cutoff frequency and of the quality factor. It includes a gain enhancement technique, capable of increasing the basic transconductor open-loop DC gain to 52 dB
Keywords :
III-V semiconductors; MESFET integrated circuits; Q-factor; active filters; analogue processing circuits; circuit tuning; field effect analogue integrated circuits; frequency control; gallium arsenide; integrating circuits; 0.7 micron; 1.9 V; 15 mW; 500 MHz to 2.2 GHz; 52 dB; GaAs; GaAs MESFET transconductor; Q-factor contol; cutoff frequency control; fully balanced tunable transconductor; gain enhancement technique; independent control; integrator; quality factor; transconductor open-loop DC gain; transconductor-C;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970201
