• DocumentCode
    1543606
  • Title

    GaN/AlGaN MODFET with 80 GHz fmax and >100 V gate-drain breakdown voltage

  • Author

    Nguyen, N.X. ; Keller, B.P. ; Keller, S. ; Wu, Y.F. ; Le, M. ; Nguyen, C. ; DenBaars, S.P. ; Mishra, U.K. ; Grider, D.

  • Author_Institution
    Hughes Res. Labs., Malibu, CA, USA
  • Volume
    33
  • Issue
    4
  • fYear
    1997
  • fDate
    2/13/1997 12:00:00 AM
  • Firstpage
    334
  • Lastpage
    335
  • Abstract
    The authors report on the characteristics of 0.25 μm gate-length GaN/AlGaN modulation doped field effect transistors grown by MOCVD on sapphire. A record combination of high breakdown voltage (>100 V) and high frequency performance (fT=27 GHz, fmax=80 GHz) was achieved, which demonstrates the excellent potential of these devices for microwave power applications
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; sapphire; vapour phase epitaxial growth; 0.25 micron; 100 V; 27 GHz; 80 GHz; Al2O3; GaN-AlGaN; MOCVD growth; MODFET; field effect transistors; gate-drain breakdown voltage; high frequency performance; microwave power applications; modulation doped FET; sapphire substrate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970174
  • Filename
    583510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1543606