Room-temperature-operated infrared image CCD sensor using pyroelectric gate coupled by dielectric connector

Author

Okuyama, Masanori ; Togami, Yoshihiro ; Hamakawa, Yoshihiro ; Kimata, Masafumi ; Denda, Masahiko

Author_Institution

Dept. of Electr. Eng., Osaka Univ., Japan

Volume

38

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

1145

Lastpage

1151

Abstract

A room-temperature-operated infrared (IR) image sensor with 64×32 infrared-sensitive MOS gates was developed by combining a pyroelectric thin plate with a Si charge-coupled device (CCD) by dielectric coupling. A pyroelectric plate is bonded to the Si CCD with an organic dielectric, and controls the Si surface potential of the MOS gate. The ability of the pyroelectric MOS gate to control the Si surface potential as a function of the IR signal is analyzed by taking account of both electrical charge and heat transfer. From this analysis, the design of the infrared sensing element is optimized. The pyroelectric materials used for the MOS gate were LiTaO₃ and PZT, and the organic dielectrics used were glycerin, di-n-butyl sulfone, nitroaniline, and P(VDF-TrFE). The basic characteristics of the pyroelectric gate of the CCD were obtained for several combinations of the pyroelectric and organic dielectric materials

Keywords

CCD image sensors; infrared imaging; pyroelectric devices; CCD; LiTaO₃; P(VDF-TrFE; PZT; PbZrO3TiO3; Si; charge-coupled device; di-n-butyl sulfone; dielectric connector; glycerin; infrared image CCD sensor; infrared-sensitive MOS gates; nitroaniline; organic dielectric; pyroelectric gate; room-temperature-operated; surface potential; Bonding; Charge coupled devices; Charge-coupled image sensors; Dielectric devices; Dielectric materials; Infrared image sensors; Pyroelectricity; Resistance heating; Signal analysis; Temperature control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.78392

Filename

78392