DocumentCode :
1543745
Title :
Gallium arsenide finds a new niche
Author :
Cates, Ron
Author_Institution :
Vitesse Semicond. Corp., Camarillo, CA, USA
Volume :
27
Issue :
4
fYear :
1990
fDate :
4/1/1990 12:00:00 AM
Firstpage :
25
Lastpage :
28
Abstract :
The use of a very-large-scale integrated GaAs circuits for applications where high speed at room temperatures is needed, such as in computers or telecommunications, is examined. The advantages and disadvantages of a logic family called direct-coupled FET logic (DCFL) which couples the speed of GaAs with a significantly lower power dissipation than any other alternative are discussed. Material, fabrication, and packaging concerns associated with DCFL are considered. Some GaAs devices being produced in volume, at rates of several hundred a month, are described. The potential impact of these devices on the computer and telecommunications markets is addressed.<>
Keywords :
III-V semiconductors; VLSI; field effect integrated circuits; gallium arsenide; integrated logic circuits; DCFL; GaAs; VLSI; computers; direct-coupled FET logic; high speed; integrated circuits; packaging; room temperatures; telecommunications; Application software; Coupling circuits; FETs; Fabrication; Gallium arsenide; Logic devices; Packaging; Power dissipation; Telecommunication computing; Temperature;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/6.58362
Filename :
58362
Link To Document :
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