Low-power phototransceiver arrays with vertically integrated resonant-cavity LEDs and heterostructure phototransistors

Author

Weidong Zhou ; Pradhan, S. ; Bhattacharya, Pallab ; Liu, W.K. ; Lubyshev, D.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

13

Issue

11

fYear

2001

Firstpage

1218

Lastpage

1220

Abstract

Low-power phototransceivers and phototransceiver arrays, with vertically integrated high-gain heterojunction phototransistors (HPTs) and resonant-cavity light-emitting diodes (RCLEDs), are demonstrated. A tunnel junction was used as a low resistance interconnect between the two devices. The input and output wavelengths are 0.63-0.85 and 0.98 μm, respectively. The phototransceiver exhibits an optical gain of 13 dB and power dissipation of 400 μW for an input power of 5 μW. The phototransceiver arrays demonstrate good uniformity, low optical crosstalk, and imaging capabilities.

Keywords

integrated optoelectronics; light emitting diodes; optical arrays; optical receivers; optical resonators; optical transmitters; phototransistors; transceivers; 0.63 to 0.85 mum; 13 dB; 400 muW; 5 muW; good uniformity; heterostructure phototransistors; imaging capabilities; input power; low optical crosstalk; low resistance interconnect; low-power phototransceiver arrays; optical gain; power dissipation; resonant-cavity light-emitting diodes; tunnel junction; vertically integrated high-gain heterojunction phototransistors; vertically integrated resonant-cavity LEDs; Gain; Heterojunctions; Light emitting diodes; Optical arrays; Optical crosstalk; Optical imaging; Optical interconnections; Phototransistors; Power dissipation; Resonance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.959369

Filename

959369