Two-dimensional electron gas charged-coupled devices (2DEG-CCD´s)

Author

Fossum, Eric R. ; Song, Jong-In ; Rossi, David V.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

38

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

1182

Lastpage

1192

Abstract

The two-dimensional electron gas charged-coupled device (2DEG-CCD) structure for III-V and other heterojunction materials is reviewed. Device design considerations for gate, insulator, and channel material parameters are presented. Optimization of 2DEG-CCD performance parameters such as well capacity, dark current, and transfer efficiency is discussed. Experimental results on AlGaAs-GaAs uniform-doped and planar-doped devices are reviewed. AlGaAs-GaAs 2DEG-CCDs have been shown to operate with 0.9997 charge transfer efficiency, at frequencies ranging from 130 kHz to 1 GHz. A review of fundamental principles of operation and a discussion of structural and material configurations are presented

Keywords

III-V semiconductors; aluminium compounds; charge-coupled devices; electron gas; gallium arsenide; 130 kHz to 1 GHz; 2D electron gas; AlGaAs-GaAs; III-V materials; channel material parameters; charged-coupled devices; dark current; gate material parameters; heterojunction materials; insulator material parameters; planar-doped devices; transfer efficiency; two-dimensional electron gas; uniform doped devices; well capacity; Charge coupled devices; Conducting materials; Dark current; Electrons; Gallium arsenide; HEMTs; Insulation; MESFETs; MODFETs; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.78396

Filename

78396