InAs-inserted-channel InAlAs/InGaAs inverted HEMTs with NbN electrodes

Author

Akazaki, T. ; Nitta, J. ; Takayanagi, H.

Author_Institution

NTT Basic Res. Lab., Kanagawa, Japan

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

4253

Lastpage

4256

Abstract

We report on the fabrication of InAs-inserted-channel InAlAs/InGaAs inverted HEMTs with NbN electrodes made by using a DC magnetron sputtering deposition and we describe the device characteristics we obtained. Excellent pinch-off characteristics were obtained even at /spl sim/10 K when NbN electrodes retain their superconductivity. For a 3-/spl mu/m-gate device, the maximum extrinsic transconductance at 10 K was 300 mS/mm, even at the very low drain voltage of 0.2 V. We found that the HEMTs with NbN electrodes, not only have superior characteristics at /spl sim/10 K that exceed the critical temperature of Nb, but are also able to combine with NbN Josephson junctions.

Keywords

cryogenic electronics; high electron mobility transistors; semiconductor device noise; sputter deposition; superconducting interconnections; superconductor-semiconductor boundaries; 0.2 V; 10 K; 3 micron; DC magnetron sputtering deposition; Josephson junctions; NbN-InAlAs-InGaAs; critical temperature; drain voltage; inverted HEMTs; maximum extrinsic transconductance; pinch-off characteristics; Electrodes; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Magnetic devices; Sputtering; Superconducting magnets; Superconductivity;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.783964

Filename

783964