Charge transfer in 1-D HTS mesoscopic tunneling junction arrays

Author

Tong, M.Z. ; Jiang, J.F. ; Cai, Q.Y.

Author_Institution

Microelectron. Res. Center, Shanghai Jiaotong Univ., China

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

4269

Lastpage

4272

Abstract

The influence of superconducting energy gap on the performance of single electron transistor as electrometer has been studied and was found out to improve its charge sensitivity. This paper mainly deals with 1-D (dimensional) HTS mesoscopic tunneling junction array made up of HTS material Tl-1223 with capacitively coupling to a ground plan. The layered nature of Tl-1223 acts as ideal SIS junctions. The influence enforced by the superconducting energy gap on the static and dynamics of such an array is studied numerically based on the "Orthodox Theory" of single electronics. The charge transfer in the means of solitons introduced by the voltage source attached to the end of the array is also discussed.

Keywords

barium compounds; calcium compounds; electrometers; high-temperature superconductors; mesoscopic systems; single electron transistors; solitons; superconducting arrays; superconducting energy gap; superconducting transistors; superconductive tunnelling; superconductor-insulator-superconductor devices; thallium compounds; SIS junction; Tl-1223 high temperature superconductor; TlBa/sub 2/Ca/sub 2/Cu/sub 3/O; capacitive coupling; charge sensitivity; charge transfer; electrometer; layered material; mesoscopic tunneling junction; one-dimensional array; orthodox theory; single electron transistor; soliton; superconducting energy gap; Charge transfer; High temperature superconductors; Josephson junctions; Single electron transistors; Solitons; Superconducting devices; Superconducting epitaxial layers; Superconducting materials; Tunneling; Voltage;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.783968

Filename

783968