Title :
The active loads based on capacitively coupled HTSC-single hole transistor
Author :
Shen, B. ; Jiang, J.F. ; Cai, Q.Y.
Author_Institution :
Microelectron. Res. Center, Shanghai Jiaotong Univ., China
fDate :
6/1/1999 12:00:00 AM
Abstract :
Starting with the intrinsic current-voltage properties of the capacitively coupled HTSC-single hole transistor (HTSC-SHT), the intrinsic current-voltage properties of all forms of the active loads based on capacitively coupled HTSC-SHT are studied by using a semi-classical model of the single hole tunneling effect. The small signal equivalent circuit of the active loads is also discussed here, and the conclusions are significant to the design of the HTSC-SHT analog circuits.
Keywords :
equivalent circuits; high-temperature superconductors; single electron transistors; superconducting transistors; superconductive tunnelling; HTSC-SHT analog circuit; active load; capacitive coupling; current-voltage characteristics; high temperature superconductor; semi-classical model; single hole transistor; single hole tunneling; small-signal equivalent circuit; Analog circuits; Capacitance; Coupling circuits; Equivalent circuits; Microelectronics; Resistors; Signal design; Tunneling; Voltage; Working environment noise;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
