DocumentCode
1543934
Title
The active loads based on capacitively coupled HTSC-single hole transistor
Author
Shen, B. ; Jiang, J.F. ; Cai, Q.Y.
Author_Institution
Microelectron. Res. Center, Shanghai Jiaotong Univ., China
Volume
9
Issue
2
fYear
1999
fDate
6/1/1999 12:00:00 AM
Firstpage
4273
Lastpage
4276
Abstract
Starting with the intrinsic current-voltage properties of the capacitively coupled HTSC-single hole transistor (HTSC-SHT), the intrinsic current-voltage properties of all forms of the active loads based on capacitively coupled HTSC-SHT are studied by using a semi-classical model of the single hole tunneling effect. The small signal equivalent circuit of the active loads is also discussed here, and the conclusions are significant to the design of the HTSC-SHT analog circuits.
Keywords
equivalent circuits; high-temperature superconductors; single electron transistors; superconducting transistors; superconductive tunnelling; HTSC-SHT analog circuit; active load; capacitive coupling; current-voltage characteristics; high temperature superconductor; semi-classical model; single hole transistor; single hole tunneling; small-signal equivalent circuit; Analog circuits; Capacitance; Coupling circuits; Equivalent circuits; Microelectronics; Resistors; Signal design; Tunneling; Voltage; Working environment noise;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/77.783969
Filename
783969
Link To Document