The tacking CCD: a new CCD concept

Author

Bakker, Jacques G C ; Esser, Leonard J M ; Peek, Herman L. ; Sweeney, Colm J. ; Kokshoorn, Andre L. ; Theuwissen, Albert J P

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

Volume

38

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

1193

Lastpage

1200

Abstract

The tacking CCD is a new type of charge transport mechanism that is suitable for junction- and MOS-type CCDs. A specific form, the trenched tacking CCD (TTCCD), promises high pixel density and high charge handling capability per unit of surface area. The charge handling capability is improved by using a trench to increase the charge storage area. With the new design concept it becomes possible to put the gates entirely into trenches, while simultaneously using the trenches as channel stops. The TTCCD structure is suitable for making new types of solid-state image sensors with increased light sensitivity, and it may be possible to incorporate a vertical overflow drain. First samples of the TTCCD have been realized, and its functionality has been confirmed

Keywords

CCD image sensors; charge-coupled devices; doping profiles; MOS-type; channel stops; charge storage area; charge transport mechanism; dopant profiles; high charge handling capability; high pixel density; junction type CCD; solid-state image sensors; trenched tacking CCD; vertical overflow drain; Charge carriers; Charge coupled devices; Charge transfer; Delay lines; Electrodes; HDTV; Image sensors; Noise level; Optical filters; Solid state circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.78397

Filename

78397