A dynamic model of an a-Si:H photoconductive sensor

Author

Takayama, Satoshi ; Mori, Ken-Ichi ; Suzuki, Kouhei ; Tanuma, Chiaki

Author_Institution

Toshiba R&D Center, Kanagawa, Japan

Volume

38

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

1201

Lastpage

1205

Abstract

A dynamic model of an a-Si:H photoconductive sensor under a pulse driven condition is proposed. In this model, it is assumed that a high rate of recombination at the interface between a-Si:H and the substrate occurs due to hole drift along the interface when a driving voltage is applied between the electrodes. Calculated results agree with experimental results to an accuracy of 10%. It is shown that the localized state density of the bulk a-Si:H is one of the dominant factors determining the photoresponse of the a-Si:H photoconductive sensor under a pulse driven condition, and that the minimum photoresponse time of this sensor is about 5 ms

Keywords

amorphous semiconductors; electron-hole recombination; electronic density of states; elemental semiconductors; hydrogen; image sensors; photoconducting devices; photodetectors; semiconductor device models; silicon; 5 ms; amorphous Si:H; carrier generation model; dynamic model; hole drift; localized state density; minimum photoresponse time; photoconductive sensor; pulse driven condition; recombination; semiconductors; Chemical sensors; Electrodes; Image sensors; Photoconducting materials; Photoconductivity; Sensor arrays; Sensor phenomena and characterization; Space vector pulse width modulation; Thin film sensors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.78398

Filename

78398