Title :
Effect of thermal noise on the bit error rate of SFQ devices
Author :
Kang, J.H. ; Przybysz, J.X. ; Worsham, A.H. ; Miller, D.L.
Author_Institution :
Northrop Grumman STC, Pittsburgh, PA, USA
fDate :
6/1/1999 12:00:00 AM
Abstract :
To measure the effect of thermal noise on switching a Josephson junction to the voltage state a simple SFQ circuit constructed with resistively shunted Nb/AlO/sub x//Nb junctions was used. Based on a good agreement between the measured data and the thermal activation theory, the effect of thermal noise on the bit error rate of SFQ devices was studied, The effective thermal noise temperature of 10 K used to fit the data was higher than the bath temperature of 4.2 K. Careful circuit design to get large critical margins is necessary to achieve high operating temperature of SFQ logic devices.
Keywords :
aluminium compounds; integrated circuit noise; logic gates; niobium; superconducting logic circuits; superconductor-insulator-superconductor devices; thermal noise; 4.2 K; Josephson junction; Nb-AlO-Nb; SFQ devices; bath temperature; bit error rate; critical margins; operating temperature; resistively shunted junctions; single flux quantum; superconducting logic circuits; thermal activation theory; thermal noise; Bit error rate; Circuit noise; Circuit synthesis; Josephson junctions; Niobium; Noise measurement; Switching circuits; Temperature; Thermal resistance; Voltage;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
