Bi-Sr-Ca-Cu-O intrinsic Josephson junctions fabricated by inhibitory ion implantation

Author

Nakajima, K. ; Yamada, N. ; Chen, J. ; Yamashita, T. ; Watauchi, S. ; Tanaka, I. ; Kojima, H.

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

4515

Lastpage

4518

Abstract

Intrinsic Josephson junctions were fabricated by silicon (Si) ion implantation into Bi-Sr-Ca-Cu-O (BSCCO) single crystals of 2212 phase grown by the traveling solvent floating zone (TSFZ) method. Si ions with the acceleration energy of 80 keV were implanted into BSCCO. Si-implanted portion of BSCCO turned to insulator and defined junctions precisely. The project range of Si into BSCCO controls thickness of intrinsic junctions. The junction exhibited a typical current-voltage characteristic of the BSCCO intrinsic Josephson junction showing a good uniformity of the critical current and the number of branches is consistent with the depth where Si ions were implanted.

Keywords

Josephson effect; bismuth compounds; calcium compounds; critical currents; high-temperature superconductors; ion implantation; strontium compounds; superconducting junction devices; 2212 phase; 80 keV; Bi-Sr-Ca-Cu-O intrinsic Josephson junctions; BiSrCaCuO; Si ion implantation; acceleration energy; critical current; current-voltage characteristic; inhibitory ion implantation; intrinsic junctions; single crystals; traveling solvent floating zone method; Acceleration; Bismuth compounds; Crystals; Current-voltage characteristics; Insulation; Ion implantation; Josephson junctions; Silicon; Solvents; Thickness control;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.784029

Filename

784029