• DocumentCode
    1544330
  • Title

    A time-dependent charge-collection efficiency for diffusion

  • Author

    Edmonds, Larry D.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    48
  • Issue
    5
  • fYear
    2001
  • fDate
    10/1/2001 12:00:00 AM
  • Firstpage
    1609
  • Lastpage
    1622
  • Abstract
    The diffusion equation has some applications relevant to charge collection from ion tracks in silicon devices. Textbook solutions for the diffusion equation are available only for a few simple boundary geometries and special types of boundary conditions. A broader class of geometries was previously treated via a charge-collection efficiency function, but this applies only to total (integrated in time from zero to infinity) collected charge. The earlier work took advantage of the fact that Laplace´s equation can be solved for a broad class of geometries. This paper extends the earlier work so that it applies to charge collected up to an arbitrary time. A time-dependent charge-collection efficiency function can be estimated for any geometry such that Laplace´s equation has been solved. In particular, the analysis permits a comparison between diffusion calculations and a computer simulation of charge collection from an ion track. This comparison supports an earlier model in which charge collection, including a so-called “prompt” component, is driven by diffusion. The analysis applies to arbitrary track locations and directions. It also provides the option of treating a device geometry as two-dimensional in rectangular coordinates (if desired) while simultaneously treating the track as a line instead of a plane. Simulation codes having such flexibility regarding geometry are difficult to use, so the analysis makes the study of geometry effects accessible to a larger number of investigators
  • Keywords
    carrier density; diffusion; electrical conductivity; semiconductor device models; Laplace equation; Si; Si devices; diffusion; ion track; prompt component; time-dependent charge-collection efficiency; Boundary conditions; Geometry; H infinity control; Laplace equations; Mathematical analysis; Mathematical model; NASA; Propulsion; Silicon devices; Space technology;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.960349
  • Filename
    960349