Comprehensive modeling of bulk-damage effects in silicon radiation detectors

Author

Passeri, Daniele ; Ciampolini, Paolo ; Bilei, Gian Mario ; Moscatelli, Francesco

Author_Institution

Dipt. di ingegneria Elettronica e dell´´Inf., Perugia Univ., Italy

Volume

48

Issue

5

fYear

2001

fDate

10/1/2001 12:00:00 AM

Firstpage

1688

Lastpage

1693

Abstract

In this paper, the issue of numerical modeling of radiation-damaged silicon devices is discussed, with reference to radiation detectors employed in high-energy physics experiments. Since the actual physical picture is far too complex to be accounted for at a first-principle (i.e., defect kinetics) level and not yet fully understood, a hierarchical approach has been followed looking for a suitable approximation of macroscopic changes of the electrical behavior of silicon device induced by radiation damage. In particular, a three deep-level trapping mechanism is accounted for by means of Shockley-Read-Hall theory, whereas the shallow-level sensitivity on the radiation is considered by means of a donor-removal model

Keywords

deep levels; radiation effects; semiconductor device models; silicon radiation detectors; Shockley-Read-Hall theory; Si; Si detectors; bulk-damage; defect kinetics; donor-removal model; high-energy physics experiment; radiation damage; shallow-level sensitivity; three deep-level trapping; Atomic layer deposition; Computational modeling; Ionizing radiation; Lattices; Physics; Radiation detectors; Semiconductor device noise; Silicon devices; Silicon radiation detectors; Working environment noise;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.960358

Filename

960358