• DocumentCode
    1544459
  • Title

    The 2N3055: a case history

  • Author

    Ellis, John N. ; Osadchy, Vince S.

  • Author_Institution
    Zarlink Semiconductor, UK
  • Volume
    48
  • Issue
    11
  • fYear
    2001
  • fDate
    11/1/2001 12:00:00 AM
  • Firstpage
    2477
  • Lastpage
    2484
  • Abstract
    The 2N3055 power transistor was introduced by the Radio Corporation of America (RCA) in the early 1960s. It was one of the first silicon power transistors, offered unrivalled second breakdown immunity and found many applications particularly in audio power amplifiers and linear power supplies. Other companies tried to copy it with varying degrees of success: one company acknowledges it now by naming a power MOSFET after it. We trace its history, manufacture and eventual decline against pressure from competing technologies. Modern simulation tools have been used to investigate the operation of the device which illustrate its good, and not so good, features. We also relate its geometry to a SPICE model. Neither of these tools would have been available to the original developers. We propose that this transistor be given a place in the archives of history, ranked alongside other famous devices of the 20th century such as the 300B tube
  • Keywords
    history; power bipolar transistors; semiconductor device manufacture; semiconductor device models; 2N3055 power transistor; RCA; SPICE model; Si; audio power amplifiers; bipolar transistors; history; linear power supplies; manufacture; second breakdown immunity; simulation tools; Electric breakdown; Geometry; History; MOSFET circuits; Manufacturing; Power MOSFET; Power amplifiers; Power supplies; Power transistors; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.960371
  • Filename
    960371