Title :
The early history of IBM´s SiGe mixed signal technology
Author :
Harame, David L. ; Meyerson, Bernard S.
Author_Institution :
IBM Corp., Essex Junction, VT, USA
fDate :
11/1/2001 12:00:00 AM
Abstract :
The history of Silicon Germanium (SiGe) at IBM is a story of persistence. The program began with an idea to replace a conventional implantation step, used in every silicon semiconductor bipolar process, by growing an in-situ doped alloy (SiGe). Many people thought the idea was of value only for a few exotic niche “research” applications. This is a story about how a small group of people persuaded a large digital computer manufacturer to invest in a new unproven technology for telecommunication applications in a field which the company knew little about. It is a success story, as SiGe technology has now become the only BiCMOS technology in development in IBM and is in the roadmaps of every major telecommunication company
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; mixed analogue-digital integrated circuits; semiconductor materials; BiCMOS mixed-signal technology; IBM; SiGe; SiGe heterojunction bipolar transistor; silicon-germanium alloy; Application software; BiCMOS integrated circuits; Boron; Computer aided manufacturing; Germanium silicon alloys; Heterojunction bipolar transistors; History; Implants; Silicon germanium; Surface resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
