Title :
A unified approach to RF and microwave noise parameter modeling in bipolar transistors
Author :
Niu, Guofu ; Cressler, John D. ; Zhang, Shiming ; Ansley, William E. ; Webster, Charles S. ; Harame, David L.
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
fDate :
11/1/2001 12:00:00 AM
Abstract :
A unified approach to RF and microwave noise parameter modeling in bipolar transistors is presented. Circuit level noise parameters including the minimum noise figure, the optimum generator admittance, and the noise resistance are analytically linked to the fundamental noise sources and the y-parameters of the transistor through circuit analysis of the chain noisy two-port representation. Comparisons of circuit level noise parameters from different physical models of noise sources in the transistor were made against measurements in UHV/CVD SiGe HBTs. A new model for the collector shot noise is then proposed which produces better noise parameter agreement with measured data than the SPICE noise model and the thermodynamic noise model, the two most recent Y-parameter based noise models
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; shot noise; RF noise; SiGe; UHV/CVD SiGe HBT; bipolar transistor; chain noisy two-port model; circuit analysis; circuit-level noise; collector shot noise; microwave noise; minimum noise figure; noise resistance; optimum generator admittance; y-parameters; Admittance; Bipolar transistors; Circuit analysis; Circuit noise; Microwave transistors; Noise figure; Noise generators; Noise level; Noise measurement; Radio frequency;
Journal_Title :
Electron Devices, IEEE Transactions on
