A unified approach to RF and microwave noise parameter modeling in bipolar transistors

Author

Niu, Guofu ; Cressler, John D. ; Zhang, Shiming ; Ansley, William E. ; Webster, Charles S. ; Harame, David L.

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

Volume

48

Issue

11

fYear

2001

fDate

11/1/2001 12:00:00 AM

Firstpage

2568

Lastpage

2574

Abstract

A unified approach to RF and microwave noise parameter modeling in bipolar transistors is presented. Circuit level noise parameters including the minimum noise figure, the optimum generator admittance, and the noise resistance are analytically linked to the fundamental noise sources and the y-parameters of the transistor through circuit analysis of the chain noisy two-port representation. Comparisons of circuit level noise parameters from different physical models of noise sources in the transistor were made against measurements in UHV/CVD SiGe HBTs. A new model for the collector shot noise is then proposed which produces better noise parameter agreement with measured data than the SPICE noise model and the thermodynamic noise model, the two most recent Y-parameter based noise models

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; shot noise; RF noise; SiGe; UHV/CVD SiGe HBT; bipolar transistor; chain noisy two-port model; circuit analysis; circuit-level noise; collector shot noise; microwave noise; minimum noise figure; noise resistance; optimum generator admittance; y-parameters; Admittance; Bipolar transistors; Circuit analysis; Circuit noise; Microwave transistors; Noise figure; Noise generators; Noise level; Noise measurement; Radio frequency;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.960384

Filename

960384