Title :
Nonequilibrium electron transport in HBTs
Author :
Ishibashi, Tadao
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
fDate :
11/1/2001 12:00:00 AM
Abstract :
Nonequilibrium electron transport in heterojunction bipolar transistors (HBTs) becomes clearly observable as their vertical dimensions are reduced, This is the reason for the superior tradeoff relationships between the device parameters and the resultant high-speed performance of HBTs fabricated with III-V semiconductor materials. This paper reviews the hot carrier effect in the base and the velocity overshoot effect in the collector and discusses the roles these effects play in reducing carrier traveling times and improving device performance
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; GaAs; HBTs; III-V semiconductor materials; InP; carrier traveling times; device parameter; device performance; high-speed performance; hot carrier effect; nonequilibrium electron transport; tradeoff relationships; velocity overshoot effect; vertical dimensions; Cutoff frequency; Electrons; FETs; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MODFETs; Semiconductor materials; Steady-state; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
