Title :
An improved FET model for computer simulators
Author :
Parker, Anthony E. ; Skellern, David J.
Author_Institution :
Dept. of Electr. Eng., Sydney Univ., NSW, Australia
fDate :
5/1/1990 12:00:00 AM
Abstract :
Described is an alternative simple description of FET drain current that provides the flexibility of an extra parameter which can be chosen to approximate the Shockley expression or general power law. An empirical polynomial expression which uses only integer powers is used to provide computational efficiency. The expression gives the designer a more accurate FET model which is consistent for both large- and small-signal simulations
Keywords :
circuit analysis computing; field effect transistors; semiconductor device models; FET model; Shockley expression; computer simulators; drain current; general power law; large signal simulation; polynomial expression; small-signal simulations; Australia; Circuit simulation; Computational efficiency; Computational modeling; Computer simulation; Doping profiles; FETs; Polynomials; SPICE; Semiconductor process modeling;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
