Self-heating effect compensation in HBTs and its analysis and simulation

Author

Zhu, Yu. ; Twynam, John K. ; Yagura, Motoji ; Hasegawa, Masatomo ; Hasegawa, Takao ; Eguchi, Yoshihito ; Amano, Yoshihisa ; Suematsu, Eiji ; Sakuno, Keiichi ; Matsumoto, Nobuyuki ; Sato, Hiroya ; Hashizume, Nobuo

Author_Institution

Adv. Technol. Labs., Sharp Corp., Nara, Japan

Volume

48

Issue

11

fYear

2001

fDate

11/1/2001 12:00:00 AM

Firstpage

2640

Lastpage

2646

Abstract

A simple technique, inserting a specified resistance in the bias circuit, to compensate self-heating effect in DC and pulse characteristics of HBTs is proposed and demonstrated. Utilizing the bias scheme dependence of HBT behaviors, the compensation is achieved due to the cancellation of the positive and negative thermal-electric feedback inside HBTs. An analytical expression relating the specified resistance with the physical parameters of HBT is presented. The accurate simulation of both the self-heating effect and its compensation is, for the first time, demonstrated with a modified Gummel-Poon model

Keywords

compensation; heterojunction bipolar transistors; semiconductor device models; DC characteristics; Gummel-Poon model; bias circuit; electrical resistance; heterojunction bipolar transistor; pulse characteristics; self-heating effect compensation; thermal-electric feedback; Analytical models; Associate members; Circuits; Electronic ballasts; Feedback; Heterojunction bipolar transistors; Laboratories; Resistors; Temperature dependence; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.960390

Filename

960390