Title :
Self-heating effect compensation in HBTs and its analysis and simulation
Author :
Zhu, Yu. ; Twynam, John K. ; Yagura, Motoji ; Hasegawa, Masatomo ; Hasegawa, Takao ; Eguchi, Yoshihito ; Amano, Yoshihisa ; Suematsu, Eiji ; Sakuno, Keiichi ; Matsumoto, Nobuyuki ; Sato, Hiroya ; Hashizume, Nobuo
Author_Institution :
Adv. Technol. Labs., Sharp Corp., Nara, Japan
fDate :
11/1/2001 12:00:00 AM
Abstract :
A simple technique, inserting a specified resistance in the bias circuit, to compensate self-heating effect in DC and pulse characteristics of HBTs is proposed and demonstrated. Utilizing the bias scheme dependence of HBT behaviors, the compensation is achieved due to the cancellation of the positive and negative thermal-electric feedback inside HBTs. An analytical expression relating the specified resistance with the physical parameters of HBT is presented. The accurate simulation of both the self-heating effect and its compensation is, for the first time, demonstrated with a modified Gummel-Poon model
Keywords :
compensation; heterojunction bipolar transistors; semiconductor device models; DC characteristics; Gummel-Poon model; bias circuit; electrical resistance; heterojunction bipolar transistor; pulse characteristics; self-heating effect compensation; thermal-electric feedback; Analytical models; Associate members; Circuits; Electronic ballasts; Feedback; Heterojunction bipolar transistors; Laboratories; Resistors; Temperature dependence; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
