Flexible Resistive Switching Memory Device Based on Graphene Oxide

Author

Hong, Seul Ki ; Kim, Ji Eun ; Kim, Sang Ouk ; Choi, Sung-Yool ; Cho, Byung Jin

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

31

Issue

9

fYear

2010

Firstpage

1005

Lastpage

1007

Abstract

A resistive switching memory device based on graphene oxide (GO) is presented. It is found that the resistive switching characteristic has a strong dependence on electrode material and GO thickness. In our experiment, an Al/GO/ITO structure with 30-nm-thick GO shows good switching performance with an on/off resistance ratio of 10³, low set/reset voltage, and excellent data retention. The GO memory is also fabricated on a flexible substrate with no degradation in switching property, even when the substrate is bent down to 4-mm radius, indicating that the GO memory is an excellent candidate to be a memory device for future flexible electronics.

Keywords

aluminium; graphene; indium compounds; microelectrodes; random-access storage; Al-CO-ITO; GO memory; ReRAM; electrode material; flexible resistive switching memory device; graphene oxide; on-off resistance ratio; radius 4 mm; resistive random access memory; size 30 nm; Aluminum; Coatings; Electrodes; Fabrication; Flexible electronics; Indium tin oxide; MIM capacitors; Materials science and technology; Methanol; Voltage; Flexible memory; graphene oxide; resistive switching memory;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2053695

Filename

5518354