Title :
Large electric field effect on Al/BaTiO/sub 3//Y/sub 0.6/Pr/sub 0.4/Ba/sub 2/Cu/sub 3/O/sub 7-y/ structure
Author :
Hontsu, S. ; Ishii, J. ; Nakamori, M. ; Tabata, H. ; Kawai, T. ; Fujimaki, A.
Author_Institution :
Dept. of Electron. Syst. & Inf. Eng., Kinki Univ., Wakayama, Japan
fDate :
6/1/1997 12:00:00 AM
Abstract :
A superconducting field effect transistor with Al/BaTiO/sub 3//Y/sub 0.6/Pr/sub 0.4/Ba/sub 2/Cu/sub 3/O/sub 7-y/ multistructures has been fabricated by in situ pulsed laser deposition technique. The BTO/YPBCO bilayers show well crystallized structures by X-ray diffraction measurements. The relative dielectric constant (/spl epsi//sub r/) of BTO is 170 at 77 K. The observed relative change of the source-drain resistance (/spl Delta/R/sub SD//R/sub SD/) is enhanced up to -17.2% by the application of electric field. This value is 34 times as large as calculated from the modulation of areal carrier of field-induced charge density (/spl Delta/n/n).
Keywords :
aluminium; barium compounds; field effect transistors; high-temperature superconductors; permittivity; praseodymium compounds; pulsed laser deposition; superconducting transistors; yttrium compounds; Al-BaTiO/sub 3/-Y/sub 0.6/Pr/sub 0.4/Ba/sub 2/Cu/sub 3/O/sub 7/; Al/BaTiO/sub 3//Y/sub 0.6/Pr/sub 0.4/Ba/sub 2/Cu/sub 3/O/sub 7-y/ multistructure; BTO/YPBCO bilayer; X-ray diffraction; areal carrier modulation; charge density; crystallized structure; dielectric constant; electric field effect; fabrication; pulsed laser deposition; source-drain resistance; superconducting field effect transistor; Crystallization; Dielectric constant; Dielectric measurements; Electric resistance; Electrical resistance measurement; FETs; Optical pulses; Pulsed laser deposition; X-ray diffraction; X-ray lasers;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
