Tunnel injection active region in an oxide-confined vertical-cavity surface-emitting laser

Author

Huffaker, D.L. ; Oh, T.-H. ; Deppe, D.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

9

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

716

Lastpage

718

Abstract

Data are presented on oxide-confined AlGaAs-GaAs-InGaAs VCSEL´s that use high-index half-wave GaAs spacer layers and electronic tunnel injection and confinement. To our knowledge, this is the first demonstration of tunnel injection in a vertical-cavity laser. Threshold currents range from 344 μA for a 6.5-μm diameter device to 151 μA for a 1-μm diameter device. The relatively high threshold currents are attributed to a detuned cavity and higher order transverse-mode operation.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; quantum well lasers; surface emitting lasers; tunnelling; 1 mum; 151 muA; 344 muA; 6.5 mum; AlGaAs-GaAs-InGaAs; AlGaAs-GaAs-InGaAs VCSEL; DBR; GaAs; VCSEL; confinement; detuned cavity; electronic tunnel injection; high-index half-wave GaAs spacer layers; higher order transverse-mode operation; oxide-confined vertical-cavity surface-emitting laser; threshold currents; tunnel injection active region; Carrier confinement; Distributed Bragg reflectors; Gallium arsenide; Optical pumping; Optical resonators; Pump lasers; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.584967

Filename

584967