Long-wavelength resonant vertical-cavity LED/photodetector with a 75-nm tuning range

Author

Christenson, G.L. ; Tran, A.T.T.D. ; Zhu, Z.H. ; Lo, Y.H. ; Hong, Mingyi ; Mannaerts, J.P. ; Bhat, R.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

9

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

725

Lastpage

727

Abstract

A design for a highly tunable long-wavelength LED/photodetector has been investigated. The device consists of a GaAs-based distributed Bragg reflector (DBR) that is wafer-bonded to InP-based active layers, with a surface-micromachined tunable top DBR mirror to produce the wavelength shift. A 1.5-μm device has been fabricated with a continuous tuning range of 75 nm. An extinction ratio of greater than 20 dB existed across the entire tuning range.

Keywords

III-V semiconductors; indium compounds; infrared detectors; integrated optoelectronics; light emitting diodes; micromachining; mirrors; optical interconnections; optical receivers; optical transmitters; photodetectors; semiconductor quantum wells; tuning; wafer bonding; 1.5 mum; 1.5-/spl mu/m device; 75-nm tuning range; AlAs layers; GaAs; GaAs-AlAs; GaAs-based distributed Bragg reflector; InGaAsP; InP; InP-based active layers; compressively strained InGaAsP quantum wells; continuous tuning range; design; extinction ratio; highly tunable long-wavelength LED/photodetector; long-wavelength resonant vertical-cavity LED/photodetector; surface-micromachined tunable top DBR mirror; wafer-bonded; wavelength shift; Distributed Bragg reflectors; Gallium arsenide; Laser tuning; Light emitting diodes; Mirrors; Optical tuning; Photodetectors; Resonance; Tunable circuits and devices; Wafer bonding;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.584970

Filename

584970