DocumentCode :
1545221
Title :
Sub-500-ps 64-b ALUs in 0.18-μm SOI/bulk CMOS: design and scaling trends
Author :
Mathew, Sanu K. ; Krishnamurthy, Ram K. ; Anders, Mark A. ; Rios, Rafael ; Mistry, Kaizad R. ; Soumyanath, K.
Author_Institution :
Circuit Res. Lab., Intel Corp., Hillsboro, OR, USA
Volume :
36
Issue :
11
fYear :
2001
fDate :
11/1/2001 12:00:00 AM
Firstpage :
1636
Lastpage :
1646
Abstract :
In this paper, we present: 1) design of a single-rail energy-efficient 64-b Han-Carlson ALU, operating at 482 ps in 1.5 V, 0.18-μm bulk CMOS; 2) direct port of this ALU to 0.18-μm partially depleted SOI process; 3) SOI-optimal redesign of the ALU using a novel deep-stack quaternary-tree architecture; 4) margining for max-delay pushout due to reverse body bias in SOI designs; and 5) performance scaling trends of the ALU designs in 0.13-μm generation. We show that a direct port of the Han-Carlson ALU to 0.18-μm SOI offers 14% performance improvement after margining. A redesign of the ALU, using an SOI-favored deep-stack architecture improves the margined speedup to 19%. A 10% margin was required for the SOI designs, to account for reverse body-bias-induced max-delay pushout. Preconditioning the intermediate stack nodes in the dynamic ALU designs reduced this margin to 2%. Scaling the ALUs to 0.13-μm generation reduces the overall SOI speedup for both architectures to 9% and 16%, respectively, confirming the trend that speedup offered by SOI technology decreases with scaling
Keywords :
CMOS logic circuits; adders; digital arithmetic; integrated circuit design; low-power electronics; silicon-on-insulator; 0.18 micron; 1.5 V; 482 ps; 64 bit; SOI-optimal redesign; SOI/bulk CMOS; Si; deep-stack quaternary-tree architecture; dynamic ALU designs; intermediate stack nodes; partially depleted SOI process; performance scaling trends; reverse body bias; reverse body-bias-induced max-delay pushout; scaling trends; single-rail energy-efficient Han-Carlson ALU; Adders; CMOS process; CMOS technology; Circuit testing; Delay; Energy efficiency; Helium; Internet; Silicon on insulator technology; Web server;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.962283
Filename :
962283
Link To Document :
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