Two-dimensional C-V model of AlGaAs/GaAs modulation doped field effect transistor (MODFET) for high frequency applications

Author

Sen, Sujata ; Pandey, Manoj K. ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Delhi Univ., India

Volume

46

Issue

9

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

1818

Lastpage

1823

Abstract

This paper reports a detailed two-dimensional (2-D) analytical capacitance-voltage (C-V) model for a modulation-doped field effect transistor. The contribution of various capacitances on the performance of the device is shown. The analysis includes the effect of design parameters on cutoff frequency, and the peak cutoff frequency obtained is 190 GHz. The excellent agreement with the simulated and experimental data proves the validity and applicability of the model to optimize the device at high frequencies

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; high-frequency effects; semiconductor device models; 190 GHz; 2D C-V model; AlGaAs-GaAs; AlGaAs/GaAs MODFET; MODFET; analytical capacitance-voltage model; high frequency applications; modulation doped field effect transistor; peak cutoff frequency; Capacitance; Capacitance-voltage characteristics; Cutoff frequency; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MODFET circuits; Semiconductor process modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.784179

Filename

784179