Title :
A Contact-Resistive Random-Access-Memory-Based True Random Number Generator
Author :
Huang, Chien-Yuan ; Shen, Wen Chao ; Tseng, Yuan-Heng ; King, Ya-Chin ; Lin, Chrong-Jung
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
A new type of true random number generator, based on the random telegraph noise of a contact-resistive random access memory device, is proposed in this letter. The random-number generator consists of only a simple bias circuit plus a comparator, leading to small circuit area and low power consumption. By realizing this generator by the 65-nm complementary metal-oxide-semiconductor logic process, the occupied area can be as low as 45 μm2, demonstrating substantial saving in the circuit area.
Keywords :
CMOS memory circuits; random noise; random number generation; random-access storage; bias circuit; comparator; complementary metal-oxide-semiconductor logic process; contact-resistive random access memory device; low power consumption; random telegraph noise; size 65 nm; true random number generator; Electron traps; Encryption; Generators; Noise; Resistance; Voltage control; Contact-resistive random access memory (CRRAM); random telegraph noise (RTN); random-number generator;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2199734
