• DocumentCode
    1545273
  • Title

    Enhanced Power Efficiency of Organic Light-Emitting Diodes using Pentacene on \\hbox {CF}_{4} -Plasma-Treated Indium Tin Oxide Anodes

  • Author

    Park, Young Wook ; Choi, Hyun Ju ; Choi, Jin Hwan ; Park, Tae Hyun ; Jeong, Jin-Wook ; Song, Eun Ho ; Ju, Byeong Kwon

  • Author_Institution
    Display & Nanosystem Lab., Korea Univ., Seoul, South Korea
  • Volume
    33
  • Issue
    8
  • fYear
    2012
  • Firstpage
    1156
  • Lastpage
    1158
  • Abstract
    In this letter, we demonstrate high-performance organic light-emitting diodes (OLEDs) by matching various hole injection-transport layers (HITLs) with plasma surface treatments. The OLED device with pentacene HITL on CF4-plasma-treated indium tin oxide showed the highest performance due to relatively improved hole injection and the high-hole-mobility characteristics of the pentacene. Using a high-electron-mobility material as an electron transport layer to improve the carrier balance of electrons and holes, the electroluminescent efficiency was further improved. These methods are simple and promising for the enhancement of OLED performances. These findings will be applicable to mobile displays that feature low electric power consumption.
  • Keywords
    carbon compounds; electroluminescent devices; electron mobility; indium compounds; organic light emitting diodes; surface treatment; CF4-ITO; electroluminescent efficiency; electron transport layer; enhanced power efficiency; high-electron-mobility material; high-hole-mobility characteristics; high-performance OLED device; high-performance organic light-emitting diode device; hole injection-transport layers; low electric power consumption; mobile displays; pentacene HITL; plasma-treated indium tin oxide anodes; Anodes; Indium tin oxide; Organic light emitting diodes; Pentacene; Plasmas; Surface treatment; $hbox{CF}_{4}$ -plasma ($hbox{CF}_{4} hbox{-} hbox{P}$) treatment; Carrier mobility; hole injection–transport layer (HITL); pentacene;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2199461
  • Filename
    6221945