DocumentCode :
1545279
Title :
In-Plane Gate Transistors With a 40- 
-Wide Channel Width
Author :
Chung, Tung-Hsun ; Lin, Wei-Hsun ; Chao, Yi-Kai ; Chang, Shu-Wei ; Lin, Shih-Yen
Author_Institution :
Res. Center for Appl. Sci., Acad. Sinica, Taipei, Taiwan
Volume :
33
Issue :
8
fYear :
2012
Firstpage :
1129
Lastpage :
1131
Abstract :
An in-plane gate transistor with a GaAs/AlGaAs 2-D electron-gas channel about 40 μm in width is investigated. The saturation region and the drain current modulation at different gate bias voltages are observed despite the wide channel. The surface-induced channel depletion is suggested as the main mechanism for the turn-off of the drain current at - 10 V gate bias.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; 2D electron-gas channel; GaAs-AlGaAs; HEMT; drain current; drain current modulation; gate bias voltages; high-electron mobility transistors; in-plane gate transistors; size 40 mum; surface-induced channel depletion; Gallium arsenide; HEMTs; Logic gates; MODFETs; Modulation; Standards; 2-D electron gas (2DEG); In-plane gate transistors (IPGTs);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2199735
Filename :
6221946
Link To Document :
