Title :
Modeling of alpha-particle-induced soft error rate in DRAM
Author_Institution :
Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea
fDate :
9/1/1999 12:00:00 AM
Abstract :
Alpha-particle-induced soft error in 256 M DRAM was numerically investigated. A unified model for alpha-particle-induced charge collection and a soft-error-rate simulator (SERS) was developed. We investigated the soft error rate of 256 M DRAM and identified the bit-bar mode as one of dominant modes for soft error. In addition, for the first time, it was found that trench-oxide depth has a significant influence on soft error rate, and it should be determined by the tradeoff between soft error rate and cell-to-cell isolation characteristics
Keywords :
DRAM chips; alpha-particle effects; radiation hardening (electronics); semiconductor device models; 265 MB; DRAM; alpha-particle-induced soft error rate; bit-bar mode; cell-to-cell isolation characteristics; charge collection; funneling; radiation effect; soft-error-rate simulator; trench-oxide depth; Alpha particles; Equations; Error analysis; Impurities; Materials reliability; Packaging; Particle tracking; Radiation effects; Random access memory; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
