DocumentCode
1545281
Title
Modeling of alpha-particle-induced soft error rate in DRAM
Author
Shin, Hyungsoon
Author_Institution
Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea
Volume
46
Issue
9
fYear
1999
fDate
9/1/1999 12:00:00 AM
Firstpage
1850
Lastpage
1857
Abstract
Alpha-particle-induced soft error in 256 M DRAM was numerically investigated. A unified model for alpha-particle-induced charge collection and a soft-error-rate simulator (SERS) was developed. We investigated the soft error rate of 256 M DRAM and identified the bit-bar mode as one of dominant modes for soft error. In addition, for the first time, it was found that trench-oxide depth has a significant influence on soft error rate, and it should be determined by the tradeoff between soft error rate and cell-to-cell isolation characteristics
Keywords
DRAM chips; alpha-particle effects; radiation hardening (electronics); semiconductor device models; 265 MB; DRAM; alpha-particle-induced soft error rate; bit-bar mode; cell-to-cell isolation characteristics; charge collection; funneling; radiation effect; soft-error-rate simulator; trench-oxide depth; Alpha particles; Equations; Error analysis; Impurities; Materials reliability; Packaging; Particle tracking; Radiation effects; Random access memory; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.784184
Filename
784184
Link To Document