Title :
A unified analytical fully depleted and partially depleted SOI MOSFET model
Author :
Jang, Sheng-Lyang ; Huang, Bohr-Ran ; Ju, Jiann-Jong
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
fDate :
9/1/1999 12:00:00 AM
Abstract :
In this paper we present a unified analytical drain current model for fully depleted and partially depleted SOI MOSFETs. The analytical model is based on a nonpinned surface potential approach and is valid in all regions of operation. It was developed by starting from a two-dimensional Poisson equation, and its accuracy has been verified with the experimental data of SOI MOSFETs
Keywords :
MOSFET; Poisson equation; semiconductor device models; silicon-on-insulator; surface potential; MOSFET model; SOI MOSFET; drain current model; fully depleted devices; nonpinned surface potential approach; partially depleted devices; two-dimensional Poisson equation; Analytical models; Circuit simulation; Computational modeling; Doping; MOSFET circuits; Parasitic capacitance; Poisson equations; Semiconductor process modeling; Surface resistance; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
