DocumentCode
1545295
Title
A unified analytical fully depleted and partially depleted SOI MOSFET model
Author
Jang, Sheng-Lyang ; Huang, Bohr-Ran ; Ju, Jiann-Jong
Author_Institution
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Volume
46
Issue
9
fYear
1999
fDate
9/1/1999 12:00:00 AM
Firstpage
1872
Lastpage
1876
Abstract
In this paper we present a unified analytical drain current model for fully depleted and partially depleted SOI MOSFETs. The analytical model is based on a nonpinned surface potential approach and is valid in all regions of operation. It was developed by starting from a two-dimensional Poisson equation, and its accuracy has been verified with the experimental data of SOI MOSFETs
Keywords
MOSFET; Poisson equation; semiconductor device models; silicon-on-insulator; surface potential; MOSFET model; SOI MOSFET; drain current model; fully depleted devices; nonpinned surface potential approach; partially depleted devices; two-dimensional Poisson equation; Analytical models; Circuit simulation; Computational modeling; Doping; MOSFET circuits; Parasitic capacitance; Poisson equations; Semiconductor process modeling; Surface resistance; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.784187
Filename
784187
Link To Document