DocumentCode :
1545315
Title :
6-MHz 2-N/m piezoresistive atomic-force microscope cantilevers with INCISIVE tips
Author :
Ried, Robert P. ; Mamin, H. Jonathon ; Terris, Bruce D. ; Fan, Long-Sheng ; Rugar, Daniel
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
Volume :
6
Issue :
4
fYear :
1997
fDate :
12/1/1997 12:00:00 AM
Firstpage :
294
Lastpage :
302
Abstract :
Piezoresistive atomic force-microscope (AFM) cantilevers with lengths of 10 μm, displacement sensitivities of (ΔR/R)/A 1.1×10-5, displacement resolutions of 2×10-3 A/√Hz, mechanical response times of less than 90 ns, and stiffnesses of 2 N/m have been fabricated from a silicon-on-insulator (SOI) wafer using a novel frontside-only release process. To reduce mass, the cantilevers utilize novel inplane crystallographically defined silicon variable aspect-ratio (INCISIVE) tips with radius of curvature of 40 A. The cantilevers have been used in an experimental AFM data-storage system to read back data with an areal density of 10 Gb/cm 2. Four-legged cantilevers with both imaging and thermomechanical surface modification capabilities have been used to write 2-Gb/cm2 data at 50 kb/s on a spinning polycarbonate sample and to subsequently read the data. AFM imaging has been successfully demonstrated with the cantilevers. Some cantilever designs have sufficient displacement resolution to detect their own mechanical-thermal noise in air. The INCISIVE tips also have applications to other types of sensors
Keywords :
atomic force microscopy; digital storage; etching; micromachining; microsensors; noise; piezoresistive devices; semiconductor technology; sensitivity analysis; silicon-on-insulator; wear; 10 Gbit; 10 micron; 2 Gbit; 40 A; 50 kbit/s; 90 ns; AFM cantilevers; AFM data-storage system; AFM imaging; INCISIVE tips; SOI wafer; Si; Si variable aspect-ratio tips; atomic-force microscope cantilevers; crystallographically defined tips; displacement resolution; displacement sensitivity; frontside-only release process; mechanical response times; micromechanical system; piezoresistive cantilevers; sensor; spinning polycarbonate sample; stiffnesses; thermomechanical surface modification capability; Atomic force microscopy; Delay; Magnetic confinement; Memory; Piezoresistance; Piezoresistive devices; Silicon on insulator technology; Spinning; Surface topography; Thermomechanical processes;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.650125
Filename :
650125
Link To Document :
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