Title :
High-speed polysilicon resonant-cavity photodiode with SiO2-Si Bragg reflectors
Author :
Bean, J.C. ; Jieming Qi ; Schow, C.L. ; Li, R. ; Nie, H. ; Schaub, J. ; Campbell, J.C.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
Previously, it has been shown that the bandwidth of Si photodiodes can be increased by more than an order of magnitude, without sacrificing responsivity, by a resonant-cavity structure that utilized GeSi-Si asymmetric Bragg reflectors. We report an interdigitated p-i-n polysilicon resonant-cavity photodiode, which employs a Si-SiO2 Bragg reflector, that is more compatible with standard Si processing technology. For an absorbing region thickness of only 0.5 μm, a peak quantum efficiency of 40% was achieved and the dark current was <60 nA at 10 V. For 2 μm×2-μm finger width and spacing the bandwidth was 10 GHz.
Keywords :
cavity resonators; elemental semiconductors; high-speed optical techniques; integrated optoelectronics; mirrors; optical resonators; p-i-n photodiodes; photodetectors; silicon; silicon compounds; 0.5 mum; 10 GHz; 10 V; 2 mum; 40 percent; 60 nA; OEICs; Si; Si processing technology compatibility; SiO/sub 2/-Si; SiO/sub 2/-Si Bragg reflectors; absorbing region thickness; bandwidth increase; dark current; finger spacing; finger width; high-speed polysilicon resonant-cavity photodiode; interdigitated p-i-n polysilicon resonant-cavity photodiode; peak quantum efficiency; resonant-cavity structure; Absorption; Bandwidth; High speed integrated circuits; High speed optical techniques; Integrated circuit noise; Mirrors; Molecular beam epitaxial growth; PIN photodiodes; Photodetectors; Resonance;
Journal_Title :
Photonics Technology Letters, IEEE
