Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM

Author

Aoulaiche, Marc ; Nicoletti, Talitha ; Almeida, Luciano Mendes ; Simoen, Eddy ; Veloso, Anabela ; Blomme, Pieter ; Groeseneken, Guido ; Jurczak, Malgorzata

Author_Institution

Interuniv. Microelectron. Center, Leuven, Belgium

Volume

59

Issue

8

fYear

2012

Firstpage

2167

Lastpage

2172

Abstract

One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by two to three orders of magnitude by reducing the body-junction electric field. However, the retention time distribution, which is mainly caused by the generation-recombination center density variation, remains similar.

Keywords

electric fields; junction gate field effect transistors; random-access storage; silicon-on-insulator; UTBOX devices; body-junction electric field; junction field effect; one-transistor floating-body RAM; one-transistor floating-body random access memory; retention time; silicon-on-insulator; Current measurement; Junctions; Logic gates; Random access memory; Standards; Temperature measurement; Time measurement; Electric field; UTBOX; floating body; floating-body random access memory (RAM) (FBRAM); one-transistor RAM; recessed junctions; retention; silicon on insulator (SOI); underlap junctions;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2200685

Filename

6221959