Increasing process margin in SiGe heterojunction bipolar technology by adding carbon

Author

Osten, H.J. ; Knoll, D. ; Heinemann, B. ; Schley, P.

Author_Institution

Inst. for Semicond. Phys., Frankfurt, Germany

Volume

46

Issue

9

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

1910

Lastpage

1912

Abstract

The incorporation of low carbon concentration within the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by a variety of subsequent processing steps. Thus, it provides greater flexibility in process design and wider latitude in process margin. We demonstrate almost ideal base current characteristics and cutoff, maximum oscillation frequencies of more than 70 GHz, and delays per stage down to 15 ps for ring oscillators with integrated SiGe:C HBT´s

Keywords

Ge-Si alloys; carbon; heterojunction bipolar transistors; semiconductor materials; 15 ps; 70 GHz; SiGe heterojunction bipolar transistor; SiGe:C; base current; carbon concentration; cutoff frequency; delay; high frequency device; integrated SiGe:C HBT; maximum oscillation frequency; outdiffusion; process margin; ring oscillator; Annealing; Boron; Carbon dioxide; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Process design; Ring oscillators; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.784193

Filename

784193