DocumentCode
1545427
Title
Low-Gas-Pressure Sputtering of CoPtCr– 
Granular Films Made by a Sintered Target Without
Author
Sasaki, S. ; Saito, S. ; Takahashi, M.
Author_Institution
Dept. of Intell. Syst. Eng., Ichinoseki Nat. Coll. of Technol., Ichinoseki, Japan
Volume
1
fYear
2010
fDate
7/2/1905 12:00:00 AM
Firstpage
4500104
Lastpage
4500104
Abstract
A new low-Ar-gas-pressure (PAr) sputtering process is proposed for the preparation of granular metal-oxide films for use as perpendicular magnetic recording media. CoO and CoSi powders were used as the raw materials of the sintered target rather than SiO2 powder to obtain the O/Si ratio to 2 in a granular film under low PAr process. Strongly exchange-coupled media were obtained at PAr = 0.6 Pa using a conventional (Co)-(Pt)-(Cr)-(SiO2) target, while use of the proposed (Co)-(Pt)-(Cr)-(CoSi)-enriched(CoO) target adjusted the oxygen composition in the granular film, which resulted in the successful fabrication of well magnetically decoupled media at PAr = 0.6 Pa.
Keywords
chemical exchanges; chromium alloys; cobalt alloys; perpendicular magnetic recording; platinum alloys; powders; silicon compounds; sintering; sputter deposition; thin films; CoO; CoPtCr-SiO2; CoSi; exchange-coupled media; granular metal-oxide films; low-argon-gas-pressure sputtering; oxygen composition; perpendicular magnetic recording media; powders; pressure 0.6 Pa; sintering; Educational institutions; Fabrication; Intelligent systems; Magnetic films; Perpendicular magnetic recording; Powders; Raw materials; Semiconductor films; Sputtering; Systems engineering and theory; CoPtCr– $hbox{SiO}_2$ ; Information storage; nanomagnetics; perpendicular magnetic recording; thin films;
fLanguage
English
Journal_Title
Magnetics Letters, IEEE
Publisher
ieee
ISSN
1949-307X
Type
jour
DOI
10.1109/LMAG.2010.2054830
Filename
5518470
Link To Document