Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz

Author

Lenox, C. ; Nie, H. ; Yuan, P. ; Kinsey, G. ; Homles, A.L., Jr ; Streetman, B.G. ; Campbell, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

11

Issue

9

fYear

1999

Firstpage

1162

Lastpage

1164

Abstract

We demonstrated a high-speed, resonant-cavity InGaAs-InAlAs separate absorption, charge, and multiplication avalanche photodiode (APD) operating at a wavelength of 1.55 μm. Due to the resonant-cavity scheme, these APDs exhibit high external quantum efficiency (/spl sim/70%) and a high unity-gain bandwidth of 24 GHz. Utilizing the excellent noise characteristics of a thin InAlAs multiplication region (k/spl sim/0.18), we have also achieved a gain-bandwidth product of 290 GHz. These bandwidth results are believed to be the highest reported values for APDs operating at 1.55 μm.

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; cavity resonators; gallium arsenide; indium compounds; optical communication equipment; optical fibre communication; optical resonators; 1.55 mum; 24 GHz; APD; InGaAs-InAlAs; gain-bandwidth product; high-speed resonant-cavity InGaAs-InAlAs separate absorption charge and multiplication avalanche photodiode; noise characteristics; quantum efficiency; resonant-cavity InGaAs-InAlAs avalanche photodiodes; thin InAlAs multiplication region; unity-gain bandwidth; Absorption; Avalanche photodiodes; Bandwidth; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical fibers; Optical noise; Quantum well devices; Resonance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.784238

Filename

784238