Title :
30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 μm wavelength
Author :
Kjebon, O. ; Schatz, R. ; Lourdudoss, S. ; Nilsson, S. ; Stalnacke, B. ; Backbom, L.
Author_Institution :
Lab. of Photonics & Microwave Eng., R. Inst. of Technol., Kista, Sweden
fDate :
3/13/1997 12:00:00 AM
Abstract :
An increased resonance frequency and reduced damping of the resonance peak leading to a record high modulation bandwidth of 30 GHz were observed in 1.55 μm InGaAsP DBR lasers. These results are attributed to the mechanism of detuned loading
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser transitions; optical modulation; quantum well lasers; 1.55 micron; 30 GHz; InGaAsP; InGaAsP DBR laser; damping; detuned loading; direct modulation bandwidth; resonance frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970335
