• DocumentCode
    1545694
  • Title

    Triangular shaped waveguide diode ring laser fabricated using Cl 2 RIBE in InP/InGaAsP

  • Author

    Ji, Chen ; Leary, M. ; Ballantyne, J.M.

  • Author_Institution
    Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
  • Volume
    33
  • Issue
    6
  • fYear
    1997
  • fDate
    3/13/1997 12:00:00 AM
  • Firstpage
    493
  • Lastpage
    494
  • Abstract
    A triangular shaped ridge waveguide diode ring laser is fabricated in InP/InGaAsP. The laser facets are etched using Cl2 RIBE. The device lases at 1.21 μm under room temperature pulsed testing
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical transmitters; ridge waveguides; ring lasers; semiconductor lasers; sputter etching; waveguide lasers; 1.21 micrometre; Cl2; InP-InGaAsP; RIBE; diode ring laser; laser facets; optical transmitters; ridge waveguide; room temperature pulsed testing; semiconductor lasers; triangular shaped waveguide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970351
  • Filename
    585061
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1545694