Title :
AC sense technique for memristor crossbar
Author :
Qureshi, M.S. ; Yi, Wei ; Medeiros-Ribeiro, G. ; Williams, R.S.
Author_Institution :
Nano Electron. Lab., Hewlett Packard Labs., Palo Alto, CA, USA
Abstract :
An alternate approach for sensing resistive memory based on a memristor is introduced. An AC input is used with the frequency domain response of a first-order filter formed by a memristor and a capacitor. This technique saves power by cutting down the DC current significantly and minimising the DC leakage current in a crossbar array of resistive memory bits.
Keywords :
capacitors; filters; frequency response; memristors; AC input; AC sense technique; DC leakage current minimisation; capacitor; crossbar array; first-order filter; frequency domain response; memristor crossbar; resistive memory bits; sensing resistive memory;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.1017
