• DocumentCode
    1545845
  • Title

    AC sense technique for memristor crossbar

  • Author

    Qureshi, M.S. ; Yi, Wei ; Medeiros-Ribeiro, G. ; Williams, R.S.

  • Author_Institution
    Nano Electron. Lab., Hewlett Packard Labs., Palo Alto, CA, USA
  • Volume
    48
  • Issue
    13
  • fYear
    2012
  • Firstpage
    757
  • Lastpage
    758
  • Abstract
    An alternate approach for sensing resistive memory based on a memristor is introduced. An AC input is used with the frequency domain response of a first-order filter formed by a memristor and a capacitor. This technique saves power by cutting down the DC current significantly and minimising the DC leakage current in a crossbar array of resistive memory bits.
  • Keywords
    capacitors; filters; frequency response; memristors; AC input; AC sense technique; DC leakage current minimisation; capacitor; crossbar array; first-order filter; frequency domain response; memristor crossbar; resistive memory bits; sensing resistive memory;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.1017
  • Filename
    6222086
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1545845