• DocumentCode
    1545862
  • Title

    AlInAs/InGaAs long-period-superlattice resonant-tunnelling transistor (LPSRTT)

  • Author

    Cheng, Shiou-Ying ; Lin, Po-Hung ; Wang, Wei-Chou ; Chen, Jing-Yuh ; Liu, Wen-Chau ; Lin, Wei

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    33
  • Issue
    6
  • fYear
    1997
  • fDate
    3/13/1997 12:00:00 AM
  • Firstpage
    534
  • Lastpage
    535
  • Abstract
    A new long-period-superlattice resonant-tunnelling transistor (LPSRTT) with a 20-period i-AlInAs/n-InGaAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performance, e.g. the very small offset voltage. Furthermore, an interesting negative-differential-resistance (NDR) phenomenon resulting from the resonant tunnelling through the superlattice region is obtained at 77 K
  • Keywords
    aluminium compounds; 77 K; AlInAs-InGaAs; NDR phenomenon; RTT; i-AlInAs/n-InGaAs superlattice; long-period-superlattice; negative-differential-resistance; resonant-tunnelling transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970291
  • Filename
    585087
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1545862