DocumentCode :
1545887
Title :
Ultra-high speed 1 μm V-gate GaAs MESFET with cutoff frequency up to 47 GHz by 2D simulation
Author :
Wang, Y.J. ; Lu, S.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
33
Issue :
6
fYear :
1997
fDate :
3/13/1997 12:00:00 AM
Firstpage :
538
Lastpage :
539
Abstract :
A new structure called the `V-gate´ MESFET is proposed. The maximum cutoff frequency of the V-gate: device was found to be 47 GHz for 1 μm gate opening. This new device structure is very suitable for microwave applications
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; semiconductor device models; 1 micron; 2D simulation; 47 GHz; GaAs; GaAs MESFET; V-gate structure; cutoff frequency; microwave applications; ultra-high speed device;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970308
Filename :
585090
Link To Document :
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