Title :
Ultra-high speed 1 μm V-gate GaAs MESFET with cutoff frequency up to 47 GHz by 2D simulation
Author :
Wang, Y.J. ; Lu, S.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
3/13/1997 12:00:00 AM
Abstract :
A new structure called the `V-gate´ MESFET is proposed. The maximum cutoff frequency of the V-gate: device was found to be 47 GHz for 1 μm gate opening. This new device structure is very suitable for microwave applications
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; semiconductor device models; 1 micron; 2D simulation; 47 GHz; GaAs; GaAs MESFET; V-gate structure; cutoff frequency; microwave applications; ultra-high speed device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970308
