Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

Author

Shinohara, K. ; Yamashita, Y. ; Endoh, A. ; Hikosaka, K. ; Matsui, T. ; Mimura, T. ; Hiyamizu, S.

Author_Institution

Commun. Res. Lab., Minist. of Posts & Telecommun., Tokyo, Japan

Volume

22

Issue

11

fYear

2001

Firstpage

507

Lastpage

509

Abstract

An excellent cutoff frequency (f/sub t/) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (L/sub g/) dependence of electron transit time (/spl tau//sub transit/) implied an increased saturation velocity (/spl upsi//sub s/) of 3.6/spl times/10/sup 7/ cm/s in the developed pseudomorphic HEMTs. This f/sub t/ is the highest value ever reported for any transistors to date.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 400 GHz; 45 nm; InGaAs-InAlAs; InGaAs/InAlAs pseudomorphic high electron mobility transistor; cutoff frequency; electron transit time; gate length; pinchoff characteristics; saturation velocity; short channel effect; ultra-high-speed operation; vertical gate recess; Charge carrier density; Cutoff frequency; Electron mobility; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.962645

Filename

962645