Novel methods to incorporate deuterium in the MOS structures

Author

Lee, M.H. ; Lin, C.-H. ; Liu, C.W.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

22

Issue

11

fYear

2001

Firstpage

519

Lastpage

521

Abstract

The deuterium concentration as high as 2/spl times/10/sup 20/ cm/sup -3/ can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO/sub 2//Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9/spl times/ 10/sup 20/ cm/sup -3/, but also leads to the formation of rough oxide.

Keywords

MIS structures; annealing; electric breakdown; elemental semiconductors; hydrogenation; interface states; oxidation; rapid thermal processing; silicon; silicon compounds; MOS structure; SiO/sub 2//Si interface state density; deuterium annealing; deuterium concentration; deuterium prebake; electrical stress; rapid thermal oxidation; soft breakdown; vacuum prebake; Annealing; Deuterium; Electric breakdown; Electrodes; Hydrogen; MOS devices; Nitrogen; Oxidation; Rapid thermal processing; Semiconductor diodes;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.962649

Filename

962649