DocumentCode
1545971
Title
A deep submicron CMOS process compatible suspending high-Q inductor
Author
Chen, Chung-Hui ; Fang, Yean-Kuen ; Yang, Chih-Wei ; Tang, C.S.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
22
Issue
11
fYear
2001
Firstpage
522
Lastpage
523
Abstract
A novel high-Q on-chip inductor structure called suspending inductor is developed to improve the characteristics of the conventional on-chip spiral inductor. The suspending inductor employs the air gap and is supported by a set of novel metal pillars to suppress the capacitance from the metal layer to the substrate. The measured maximum quality factor of the suspending inductor is improved from 4.8 to 6.3 in comparison to the conventional spiral inductor. Furthermore, the frequency at maximum quality factor is raised from 1.5-2 GHz.
Keywords
CMOS integrated circuits; Q-factor; inductors; 1.5 to 2 GHz; RF integrated circuit; air gap; capacitance; deep submicron CMOS process; metal pillars; on-chip inductor; quality factor; suspending inductor; CMOS process; Conductivity; Inductors; Network-on-a-chip; Q factor; Radio frequency; Silicon; Spirals; Substrates; Wet etching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.962650
Filename
962650
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