Title :
Tunable floating active inductor with internal offset reduction
Author :
Nagel, Ira ; Fabre, L. ; Pastre, Marc ; Krummenacher, Francois ; Cherkaoui, R. ; Kayal, Maher
Author_Institution :
Electron. Lab. & Power Syst. Lab., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Abstract :
Presented is a transistor-level implementation of a floating and tunable CMOS active inductor. It is based on the classical gyrator-C topology and is enhanced by adding an internal offset reduction mechanism to guarantee functionality also for unbalanced DC conditions. The realised inductance can be programmed for values between 685 μH and 12.4 mH and is designed to be implemented using standard CMOS technology. Its range of operation is from 250 to 750 kHz and the inductor consumption does not exceed 2 mW.
Keywords :
CMOS integrated circuits; inductance; inductors; floating CMOS active inductor; frequency 250 kHz to 750 kHz; gyrator-C topology; inductor consumption; internal offset reduction; standard CMOS technology; transistor-level implementation; tunable CMOS active inductor; tunable floating active inductor; unbalanced DC condition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.1015
