Nitrogen implanted polysilicon resistor for high-voltage CMOS technology application

Author

Chen, Chung-Hui ; Fang, Yean-Kuen ; Yang, Chih-Wei ; Wang, Ta-Wei ; Hsu, Yung-Lung ; Hsu, Shun-Liang

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

22

Issue

11

fYear

2001

Firstpage

524

Lastpage

526

Abstract

A nitrogen-implanted polysilicon thin film resistor has been proposed to improve the electrical characteristics of resistors in high-voltage CMOS technologies. The SIMS profile shows the proposed nitrogen-implanted polysilicon resistor can raise 100 times of the concentration of nitrogen. Thereby, the temperature coefficient of resistance (TCR), voltage coefficient of resistance (VCR), and mismatch are improved 20.4%, 35.9%, and 23.5% in average, respectively. The improvements are attributed to the suppression of both hydrogen intrusion by the presence of high-nitrogen concentration in polysilicon.

Keywords

CMOS integrated circuits; doping profiles; elemental semiconductors; ion implantation; nitrogen; power integrated circuits; secondary ion mass spectra; silicon; thin film resistors; SIMS profile; Si:N; electrical characteristics; high-voltage CMOS technology; hydrogen intrusion; mismatch; nitrogen implantation; polysilicon thin film resistor; temperature coefficient of resistance; voltage coefficient of resistance; CMOS technology; Electric resistance; Electric variables; Hydrogen; Nitrogen; Resistors; Temperature; Transistors; Video recording; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.962651

Filename

962651