Title :
Oxide TFT inverter with wide output dynamic range
Author :
Nam, Hyoungsik ; Song, E.J.
Author_Institution :
Dept. of Inf. Display & Adv. Display Res. Center, Kyung Hee Univ., Seoul, South Korea
Abstract :
Demonstrated is an n-channel oxide thin film transistor (TFT) inverter which achieves wider output dynamic range than a conventional one over the large threshold voltage range of oxide semiconductors. A proposed circuit adopts the two-stage inverter structure with two negative supplies and brings about low power consumption and fast rising transition as well. Simulation results show that the dynamic range is increased by 55.08% while power consumption and rising time are reduced by 23.71% and 60.54%, compared to a conventional one, on average.
Keywords :
invertors; low-power electronics; power semiconductor devices; thin film transistors; large threshold voltage range; low power consumption; n-channel oxide thin film transistor inverter; negative supplies; oxide semiconductors; two-stage inverter structure; wide output dynamic range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.1404
