Title :
A 210-GHz fT SiGe HBT with a non-self-aligned structure
Author :
Jeng, S.J. ; Jagannathan, B. ; Rieh, J.-S. ; Johnson, J. ; Schonenberg, K.T. ; Greenberg, D. ; Stricker, A. ; Chen, H. ; Khater, M. ; Ahlgren, D. ; Freeman, G. ; Stein, K. ; Subbanna, S.
Author_Institution :
IBM Commun. R&D Center, Hopewell Junction, NY, USA
Abstract :
A record 210-GHz fT SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/μm2 is fabricated with a new nonself-aligned (NSA) structure based on 0.18 μm technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cycle and minimizes transient enhanced diffusion. A low-power performance has been achieved which requires only 1 mA collector current to reach 200-GHz fT. The performance is a result of narrow base width and reduced parasitics in the device. Detailed comparison is made to a 120-GHz self-aligned production device.
Keywords :
Ge-Si alloys; current density; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; 0.18 /spl mu/m technology; 0.18 mum; 1 mA; 210 GHz; SiGe; SiGe HBT; collector current; collector current density; common emitter output characteristics; cutoff frequency; extrinsic base process; heterojunction bipolar transistor; low-complexity emitter; low-power performance; narrow base width; nonself-aligned structure; reduced parasitics; transient enhanced diffusion; Boron; Current density; Etching; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Indium phosphide; Production; Silicon germanium;
Journal_Title :
Electron Device Letters, IEEE
